copyright@ semipower electronic technology co., ltd. all rights reserved. features high ruggedness r ds( on ) (max 1.5 ? )@v gs =10v gate charge ( typ 20 nc) improved dv/dt capability 100% avalanche tested general description these n - channel enhancement mode power field effect transistors are produced using samwins proprietary, planar stripe, dmos technology. this advanced technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. these devices are widely used in ac - dc power suppliers, dc - dc converters and h - bridge pwm motor drivers n - channel mosfet absolute maximum ratings thermal characteristics symbol parameter value unit min. typ. max. r thjc thermal resistance, junction to case 3.58 o c/w r thcs thermal resistance, case to sink 0.5 o c/w r thja thermal resistance, junction to ambient 62.5 o c /w jun. 2011. rev. 2.0 1/7 bv dss : 600v i d : 6a r ds(on) :1.5ohm 1 2 3 1. gate 2. drain 3. source 1 2 3 1 2 3 to - 251 to - 252 sw6n65 samwin item sales type marking package packaging 1 sw f 6n65 sw6n65 to - 220f tube 2 sw i 6n65 sw6n65 to - 251 tube 3 sw d 6n65 sw6n65 to - 252 reel order codes to - 220f 1 2 3 symbol parameter value unit to - 220f to - 251/252 v dss drain to source voltage 600 v i d continuous drain current (@t c =25 o c) 6.0 a i dm drain current pulsed (note 1) 24 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 250 mj e ar repetitive avalanche energy (note 1) 10.6 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d total power dissipation (@t c =25 o c) 64 w derating factor above 25 o c 0.45 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 275 o c
copyright@ semipower electronic technology co., ltd. all rights reserved. electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 600 - - v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c - 0.5 - v/ o c i dss drain to source leakage current v ds =600v, v gs =0v - - 1 ua v ds =480v, t c =125 o c - - 10 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v - - 100 na v gs = - 30v, v ds =0v - - - 100 na gate to source leakage current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.0 - 4.0 v r ds(on) drain to source on state resistance v gs =10v, i d = 3a 1.3 1.5 ? dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 600 700 pf c oss output capacitance 75 95 c rss reverse transfer capacitance 9 12 t d(on) turn on delay time v ds =300v, i d =6a 20 40 ns tr rising time 28 100 t d(off) turn off delay time 45 160 t f fall time 48 165 q g total gate charge v ds =480v, v gs =10v, i d =6a 16.5 25 nc q gs gate - source charge 3.8 - q gd gate - drain charge 7.5 - source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet - - 6.0 a i sm pulsed source current - - 24.0 a v sd diode forward voltage drop. i s =6a, v gs =0v - - 1.4 v t rr reverse recovery time i s =6a, v gs =0v, di f /dt=100a/us - 250 - ns q rr breakdown voltage temperature - 1.5 - uc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 360uh, i as = 30.0a, v dd = 25v, r g =25?, starting t j = 25 o c 3. i sd 30.0a, di/dt = 300a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. samwin 2/7 sw6n65
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 1. on - state characteristics fig. 2. transfer characteristics fig. 3. on - resistance variation vs. drain current and gate voltage fig. 5. capacitance characteristics (non - repetitive) fig. 6. gate charge characteristics fig. 4. on state current vs. diode forward voltage 3/7 samwin sw6n65
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 9. maximum drain current vs. case temperature. fig. 8. on resistance variation vs. junction temperature fig. 10. maximum safe operating area fig. 11. transient thermal response curve fig 7. breakdown voltage variation vs. junction temperature samwin 4/7 sw6n65
copyright@ semipower electronic technology co., ltd. all rights reserved. v ds same type as dut dut v gs 1ma q g q gs q gd v gs charge v dd dut v ds r l r g 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f v dd dut v ds l r g 10v in i as t p time i d(t) bv dss i as v ds(t) eas = l x i as 2 x bv dss - v dd bv dss 2 1 fig. 12. gate charge test circuit & waveform fig. 13. switching time test circuit & waveform fig. 14. unclamped inductive switching test circuit & waveform 5/7 samwin sw6n65
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 15. peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd samwin 6/7 sw6n65
copyright@ semipower electronic technology co., ltd. all rights reserved. samwin revision history revision no. changed characteristics responsible date issuer rev 1.0 origination, first release alice nie 2010.12.05 xzq rev 2.0 updated the format of datasheet and added order codes. alice nie 2011.06.02 xzq ????? ? ? 25 ? mf6 029 - 88253717 029 - 88251977 ????? ??? a 2005 0755 - 83981818 0755 - 83476838 www.semipower.com.cn 7/7 sw6n65
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